发明名称 Solid-state image-sensing device
摘要 Each unit pixel has a photodiode PD, an amplifying MOS transistor T1 having its gate connected to the cathode of the photodiode PD, and a MOS transistor T2 having its source connected to the node between the photodiode PD and the gate of the MOS transistor T1. Forming only two MOS transistors other than a photodiode PD functioning as a photoelectric converter helps improve the open-area ratio.
申请公布号 US2003062583(A1) 申请公布日期 2003.04.03
申请号 US20020256887 申请日期 2002.09.27
申请人 MIYATAKE SHIGEHIRO 发明人 MIYATAKE SHIGEHIRO
分类号 H01L27/146;H04N3/14;H04N3/15;H04N5/335;H04N5/369;H04N5/374;H04N5/3745;(IPC1-7):H01L31/00 主分类号 H01L27/146
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