发明名称 |
Process window enhancement for deep trench spacer conservation |
摘要 |
In a process for manufacturing deep trench (32) memory cells, a method of enhancing the process window by better protecting the nitride spacer (52) prior to the process of stripping the pad nitride layer (38). The method also provides for the deposition of a nitride liner (64) and offers an additional advantage of not requiring the top shoulder (58) of the nitride spacer (52) to be over etched during its formation.
|
申请公布号 |
US2003064600(A1) |
申请公布日期 |
2003.04.03 |
申请号 |
US20020243492 |
申请日期 |
2002.09.13 |
申请人 |
INFINEON TECHNOLOGIES NORTH AMERICA CORP. |
发明人 |
SCHOLZ ARND R. |
分类号 |
H01L21/8242;(IPC1-7):H01L21/311 |
主分类号 |
H01L21/8242 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|