| 摘要 |
<p>The invention concerns a method for thinning a silicon wafer by etching its rear surface. The method consists in carrying out a first partial etching, by mechanical polishing, followed by a chemical etching in one or several solutions, preferably of potassium. The invention also concerns an integrated circuit formed on a wafer thinned by said method, and smart cards comprising such an integrated circuit.</p> |
