| 摘要 |
A bipolar junction transistor (BJT) used as a synchronous rectifier (SR) that is driven and controlled by an electronic circuit, such that when the collector-emitter voltage (VCE) is above an offset voltage (VOS) the circuit drives the base of the SR BJT with a base current proportional to the difference between VCE and VOS, turning the SR BJT on with a base current proportional to the collector current. When the VCE of the SR BJT falls below VOS the drive circuit turns on a second transistor coupled between the base and collector of the SR BJT to turn the SR BJT rapidly off and maintains it in the off state as the collector voltage reverses. When the VCE of the SR BJT is exceeds a threshold voltage above the normal conduction VCE range, the control circuit increases the base drive current to accelerate the SR BJT turn-on process.
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