| 摘要 |
The surface of an insulating film made of silicon-containing insulating material is covered with a mask pattern. The insulating film is dry-etched by using the mask pattern as a mask and etching gas which contains C4F8 gas and CxFy gas (wherein x and y are an integer and satisfy x>=5 and y<=(2x-1). In the dry-etching process, a sufficient etching selection ratio can be obtained between a layer to be etched and an underlying etching stopper film.
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