METHOD OF MANUFACTURING EPITAXIAL THIN FILM OF alpha-SiC ANDΑ-SiC HETEROEPITAXIAL THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a method in which theα-SiC epitaxial thin film is deposited at a low temperature on other kinds of substrate than an SiC single crystal, and to provide theα-SiC heteroepitaxial thin film manufactured by the same. SOLUTION: The method of manufacturing theα-SiC epitaxial thin film by laser abrasion comprises evaporating by irradiating a target of a single crystal or a polycrystal of anα-SiC with a pulse laser in a low pressure inert gas atmosphere and depositing the film on a heated other kinds of substrate than the SiC single crystal. Furthermore, theα-SiC heteroepitaxial thin film of the high temperature phase is also provided.