| 摘要 |
A method of producing a semiconductor device having an SOI transistor and a multi-layer wiring, including: preparing a silicon substrate having a front face and a back face; forming an inter-layer insulation layer on the front face of the silicon substrate; forming a multi-layer wiring in the inter-layer insulation layer; fixing a substrate on the inter-layer insulation layer; thinning the silicon substrate from the back face into a thin film so that the silicon substrate becomes an SOI layer; and forming a channel layer and a gate electrode on a back of the channel layer in the SOI layer, and further forming a source and a drain facing each other having the channel layer in between so that an SOI transistor is obtained.
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