发明名称 Production of structured layer on semiconductor substrate by forming acid-forming photoresist layer on structured layer, exposing the photoresist layer to light, and removing acid-containing region with lye
摘要 A structured layer on semiconductor substrate is produced by modifying the layer surface, forming an acid-forming photoresist layer, exposing the photoresist layer to light for embodying an acid-containing layer in the photoresist layer in accordance with a specified structure of a photoexposure mask, and selectively removing the acid-containing region with a lye. Production of a structured layer on a semiconductor substrate involves forming the layer on the substrate (1), modifying the layer surface to form a chemically neutral surface, forming an acid-forming photoresist layer (3) on the layer on the substrate, exposing the photoresist layer to light for embodying an acid-containing layer in the photoresist layer in accordance with a specified structure of a photoexposure mask, and selectively removing the acid-containing region of the photoresist layer with a lye.
申请公布号 DE10142683(A1) 申请公布日期 2003.04.03
申请号 DE2001142683 申请日期 2001.08.31
申请人 INFINEON TECHNOLOGIES AG 发明人 VOGT, MIRKO
分类号 G03F7/16;(IPC1-7):G03F7/00 主分类号 G03F7/16
代理机构 代理人
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