发明名称 |
Method of manufacturing a semiconductor device having a thin GaN material directly bonded to an optimized substrate |
摘要 |
A method for manufacturing an electronic device utilizing a thin GaN material is provided in which a GaN layer is epitaxially grown on a transfer substrate. A hydrogen ion implant layer is formed in the GaN layer. A handle substrate having desirable thermal or electrical conductivity is bonded to the transfer substrate having the GaN layer grown thereon. The joined structure is heated to split off the transfer substrate along the hydrogen ion implant layer, thereby resulting in an optimized substrate with GaN layer transferred thereto.
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申请公布号 |
US2003064535(A1) |
申请公布日期 |
2003.04.03 |
申请号 |
US20010964546 |
申请日期 |
2001.09.28 |
申请人 |
KUB FRANCIS J.;HOBART KARL D. |
发明人 |
KUB FRANCIS J.;HOBART KARL D. |
分类号 |
H01L21/762;H01L33/00;H01S5/02;H01S5/323;(IPC1-7):H01L21/00;H01L21/265 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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