发明名称 |
Verwendung von AIN als Kupferpassivierungsschicht und Wärmeleiter |
摘要 |
A copper interconnect structure is disclosed as comprising a copper layer and an aluminum nitride layer formed over the copper layer. The aluminum nitride layer passivates the copper layer surface and enhances the thermal conductivity of a semiconductor substrate by radiating heat from the substrate as well as from the copper layer. |
申请公布号 |
DE10196065(T1) |
申请公布日期 |
2003.04.03 |
申请号 |
DE2001196065T |
申请日期 |
2001.04.10 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
MCTEER, ALLEN |
分类号 |
H01L23/522;H01L21/318;H01L21/3205;H01L21/768;H01L23/367;H01L23/52;H01L23/532;(IPC1-7):H01L23/367 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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