| 摘要 |
PURPOSE: To provide a method of manufacturing a semiconductor device by the use of an etching technique capable of ensuring a sufficient etching selection ratio between an etched layer and an etching stop film in a dry etching process. CONSTITUTION: The surface of an insulating film formed of silicon-containing insulating material is covered with a mask pattern. The insulating film is subjected to dry etching through the mask pattern as a mask by the use of etching gas containing C4F8 and CxFy (x and y are each an integer and so set as to satisfy formulas, x≧5 and y≤(2x-1)).
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