| 发明名称 |
Gate structure and method |
| 摘要 |
CMOS and BiCMOS structures with a silicate-germanate gate dielectric on SiGe PMOS areas and Si NMOS areas plus HBTs with Si-SiGe emitter-base junctions.
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| 申请公布号 |
US2003062586(A1) |
申请公布日期 |
2003.04.03 |
| 申请号 |
US20020259677 |
申请日期 |
2002.09.27 |
| 申请人 |
WALLACE ROBERT M.;GNADE BRUCE E. |
发明人 |
WALLACE ROBERT M.;GNADE BRUCE E. |
| 分类号 |
H01L21/283;H01L21/28;H01L21/316;H01L21/331;H01L21/336;H01L21/8222;H01L21/8238;H01L21/8248;H01L21/8249;H01L27/06;H01L27/092;H01L29/423;H01L29/49;H01L29/51;H01L29/737;H01L29/78;H01L29/786;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/283 |
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