| 摘要 |
PURPOSE: A magnetic memory device is provided to be capable of setting magnetization to a predetermined direction. CONSTITUTION: A magnetic memory device(10) is provided with a data ferromagnetic layer(12) having a magnetization that can be oriented in either of two directions, a dielectric layer, and the first and second conductive layer(20,22) separated from each other by the dielectric layer. The magnetic memory device further includes a reference layer having ferromagnetic cladding layers, formed at the upper portion of the first and second conductive layer, a data layer, and a spacer layer(16) between the data layer and the reference layer. Preferably, the cladding layer of the reference is ultra-soft. Preferably, the spacer layer is used as an insulating tunnel barrier.
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