发明名称 Semiconductor device
摘要 A transistor (200) is provided with a semiconductor chip (1) inside a resin package (20). An outer lead (41, 42, 43, 44) is arranged on a first side surface (23) of the resin package (20) to serve as an external drain electrode. A lead frame (5) includes the outer lead (41, 42, 43, 44) and a sheet-like portion (51). The sheet-like portion (51) is connected to a first surface (1a) of the semiconductor chip (1) for holding a drain electrode. An outer lead (45, 46, 47, 48) is arranged on a second side surface (24) of the resin package (20) to serve as an external source electrode. The outer lead (45, 46, 47, 48) is connected by a wire (4) to a second surface (1b) of the semiconductor chip (1) for holding a source electrode. An ejector pin site (22) formed on a top surface (21) of the resin package (20) is located on the side of the first side surface (23).
申请公布号 US2003062608(A1) 申请公布日期 2003.04.03
申请号 US20020106368 申请日期 2002.03.27
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 HAMACHI HIROAKI
分类号 H01L23/48;H01L21/56;H01L23/495;(IPC1-7):H01L23/495 主分类号 H01L23/48
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