Process for preparing an arsenic-doped single crystal silicon using a submersed dopant feeder

摘要

A single crystal silicon ingot having a constant diameter portion that contains arsenic dopant atoms at a concentration which results in the silicon having a resistivity that is less than about 0.0025 OMEGA.cm, and wafers sliced therefrom. The present invention is also directed to a method of doping a silicon melt so that the foregoing ingot may be produced. Specifically, the method entails introducing arsenic dopant below the surface of a silicon melt, rather than on the surface, using a dopant feeder that is at least partially submersed in the silicon melt.