| 摘要 |
Disclosed is a method of tungsten-based hard mask etching of a wafer, comprising providing a patterned tungsten-based hard mask atop a metal-based surface of said wafer, etching through said pattern with a plasma etch that is selective for said metal-based surface with respect to tungsten, and executing a flash etch selective for tungsten, said etch of at least a minimum duration effective in removing substantially all defects caused by tungsten particulate contaminating said wafer. In another aspect of the first embodiment, said tungsten-based hard mask comprises a material selected from tungsten or an alloy thereof. In another aspect of the first embodiment, said metal based surface comprises a material selected from aluminum or an alloy thereof.
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