发明名称 |
Method of fabrication a flash memory cell |
摘要 |
A method of fabricating a flash memory cell. The method includes the steps of providing a semiconductor substrate; forming a first gate insulating layer; forming a first conductive layer; forming a barrier layer; removing a portion of the barrier layer to form a first opening; performing an angled implant on the exposed surface of the first conductive layer; forming a floating gate insulating layer; removing the barrier layer; forming a floating gate and a first gate insulating layer; forming a second insulating layer; forming a second conductive layer; removing portions of the second conductive layer and the second insulating layer to form a second opening and a third opening; forming a source region on the substrate; forming spacers on the sidewalls of the second opening and the third opening; and forming drain regions on the substrate within the third opening.
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申请公布号 |
US2003064564(A1) |
申请公布日期 |
2003.04.03 |
申请号 |
US20020147236 |
申请日期 |
2002.05.15 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
LIN SHIAN -JYH |
分类号 |
H01L21/28;H01L29/423;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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