发明名称 |
Method and apparatus for polishing a copper layer and method for forming a wiring structure using copper |
摘要 |
In a method and apparatus for polishing a Cu metal layer and a method for forming Cu metal wiring, Cu oxide created by a surface oxidation of a Cu metal layer is removed from the wafer. The Cu metal layer, in which Cu oxide is removed, is polished. By polishing the Cu metal layer using the above method, process failures, such as scratches, caused by the presence of remnants of Cu oxide during subsequent polishing can be prevented.
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申请公布号 |
US2003064587(A1) |
申请公布日期 |
2003.04.03 |
申请号 |
US20020233805 |
申请日期 |
2002.09.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HAN JA-HYUNG;HAH SANG-ROK;SON HONG-SEONG;HONG DUK-HO;PARK BYUNG-LYUL |
分类号 |
H01L21/304;H01L21/02;H01L21/321;H01L21/3213;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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