| 摘要 |
<p>The present invention relates to a dual-source, single-chamber method and apparatus for epitaxial sputter deposition of epilayers and high quality films. The apparatus for performing the method includes a first sputtering source (2) for the sputtering of an epitaxial film on a substrate (6). A second sputtering source 4 is for the sputtering of reactive materials to create a getter on a cryogenic shroud (8). The first sputtering source (4) and the substrate (6) are surrounded by the cryogenic shroud (8).</p> |
