Pin diode and method for fabricating the diode

摘要

The invention is a diode having at least one trench in the semiconductor substrate and insulation configured on the surface of the semiconductor substrate so that the trench limits the depletion region of the diode and the area over which an electrode is in direct contact with the diffusion region of the diode is limited by the insulation. The diode has the advantage that the extent of the depletion region, and thus the area capacitance of the diode, and the size of the electrode are decoupled from one another. The lateral extent of the depletion region can be chosen independently of the size of the electrode.