发明名称 |
Asymmetrical mosfet layout for high currents and high speed operation |
摘要 |
A structure and method for a field effect transistor capable of handling high currents, comprises interleaved source and drain diffusion regions with drain diffusion contacts to a first metal level over the drain diffusions only; while a second metal level covers the full width of the device and takes current out of the source in a primarily vertical direction.
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申请公布号 |
US2003064574(A1) |
申请公布日期 |
2003.04.03 |
申请号 |
US20010968219 |
申请日期 |
2001.10.01 |
申请人 |
PARKER SCOTT M.;TANGHE STEVEN J. |
发明人 |
PARKER SCOTT M.;TANGHE STEVEN J. |
分类号 |
H01L21/336;H01L29/06;H01L29/417;(IPC1-7):H01L21/22 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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