| 摘要 |
PROBLEM TO BE SOLVED: To provide a crucible having an inner layer and a bulk layer, the inner layer having a crystallization agent distributed therein and maintaining smoothness even when contacting with silicon melt, the crucible being excellent in dimensional stability and capable of pulling up good silicon single crystal, and to provide a method for manufacturing the same. SOLUTION: The quartz glass crucible for producing a silicon single crystal has a wall including a bottom and a side wall, an inner layer being formed in the inner portion thereof in which a crystallization agent is distributed comprising the elements selected from the group consisting of barium, aluminum, titanium, strontium and a mixture thereof. The method for manufacturing the quartz glass crucible for producing a silicon single crystal comprises introducing silica powders to the inner surface of a rotating crucible mold to form a bulk powder layer having a bottom and a side wall and defining an inner cavity, generating a high temperature atmosphere in the inner cavity, and then introducing inner portion powders and a crystallization agent into the high temperature atmosphere.
|
