发明名称 |
Test circuit for semiconductor memory and semiconductor memory device |
摘要 |
According to the present invention, a pseudo-error signal generating circuit is provided between a memory circuit and a self-test circuit. The pseudo-error signal generating circuit converts an output signal of the memory circuit based on a setting signal to supply a pseudo-error signal necessary to verify the operation of the self-test circuit. The pseudo-error signal generating circuit has a scan chain circuit in which a setting signal is set, and generates a pseudo-error signal based on the setting signal.
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申请公布号 |
US2003065996(A1) |
申请公布日期 |
2003.04.03 |
申请号 |
US20020118966 |
申请日期 |
2002.04.10 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
SHIMADA YUTAKA;FUJIWARA YOSHINORI |
分类号 |
G01R35/00;G01R31/28;G01R31/3183;G11C29/02;G11C29/12;H01L21/822;H01L27/04;(IPC1-7):G11C29/00 |
主分类号 |
G01R35/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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