发明名称 Test circuit for semiconductor memory and semiconductor memory device
摘要 According to the present invention, a pseudo-error signal generating circuit is provided between a memory circuit and a self-test circuit. The pseudo-error signal generating circuit converts an output signal of the memory circuit based on a setting signal to supply a pseudo-error signal necessary to verify the operation of the self-test circuit. The pseudo-error signal generating circuit has a scan chain circuit in which a setting signal is set, and generates a pseudo-error signal based on the setting signal.
申请公布号 US2003065996(A1) 申请公布日期 2003.04.03
申请号 US20020118966 申请日期 2002.04.10
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 SHIMADA YUTAKA;FUJIWARA YOSHINORI
分类号 G01R35/00;G01R31/28;G01R31/3183;G11C29/02;G11C29/12;H01L21/822;H01L27/04;(IPC1-7):G11C29/00 主分类号 G01R35/00
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