发明名称 |
Film planarization for low-k polymers used in semiconductor structures |
摘要 |
A method for forming a planarized dielectric layer upon a semiconductor wafer is disclosed. In an exemplary embodiment of the invention, the method includes applying an adhesion promoter to the wafer, thereby forming an adhesion promoter layer. A dielectric material is applied in a spin-on fashion upon the adhesion promoter layer at a relative humidity of less than 40% and for a thickness setting duration of less than 30 seconds. Then, the dielectric material is dried by baking without additional spinning of the semiconductor wafer.
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申请公布号 |
US2003064605(A1) |
申请公布日期 |
2003.04.03 |
申请号 |
US20010969361 |
申请日期 |
2001.10.02 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
RESTAINO DARRYL D.;HEDRICK JEFFREY C.;FITZSIMMONS JOHN A.;TYBERG CHRISTY S.;LIU CHIH-CHIEN;SIDDIQUI SHAHAB |
分类号 |
H01L21/3105;H01L21/312;(IPC1-7):H01L21/31;B32B9/04;B32B19/00;G01V3/00;H01L21/469 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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