Semiconductor device and method of providing regions of low substrate capacitance

摘要

A semiconductor device (10) includes an electrical component (70) formed on a dielectric region (22) of a semiconductor substrate (12). The dielectric region is formed with a first plurality of voids (58) extending into the substrate to a first depth (D31) and a second plurality of voids (56) extending into the semiconductor substrate to a second depth (D30) greater than the first depth.