Method of manufacturing a single crystal substrate

摘要

Provided is a method of facilitating the manufacture of single crystal substrates of silicon carbide and the like even with a large surface area by employing a method of dividing a crystal layer or substrate of silicon carbide or the like into plate-shape. The first method comprises the steps of forming a fracture layer over all or at least a portion of one of the principal surfaces of a first substrate; forming a second single crystal layer over the fracture layer on the first substrate to a thickness affording adequate self-sustaining strength; and cutting at the fracture layer formed on the first substrate to separate the second single crystal layer from the first substrate and obtain a single crystal substrate. The second method comprises the steps of forming an ion implantation layer by implanting ions into all or at least a portion of the surface of one of the principal surfaces of a first substrate; forming a second single crystal layer on the ion-implanted principal surface to a thickness affording adequate self-sustaining strength, heating the composite substrate obtained to form a void layer by forming voids in the ion implantation layer formed on said first substrate; and cutting said first substrate at said void layer to separate the second single crystal layer from the first substrate and obtain a single crystal substrate. The third method comprises the steps of forming by anodization a porous layer on all or at least a portion of one of the principal surfaces of a first substrate; forming a second single crystal layer on said porous layer of the first substrate to a thickness affording adequate self-sustaining strength; and cutting said first substrate at said porous layer to separate the second single crystal layer from the first substrate and obtain a single crystal substrate.