| 发明名称 |
Method for roughening a surface of a semiconductor substrate |
| 摘要 |
A semiconductor substrate (5) comprising a surface (10) is arranged in a furnace. Oxygen and an innert gas like argon or nitrogen are introduced into a furnace, maintaining the oxygen concentration in the furnace below 10 %. The substrate (5) is annealed at a temperature above 950 DEG C and mesopores (15) are formed in the surface (10) of the semiconductor substrate (5). <IMAGE> |
| 申请公布号 |
EP1298716(A1) |
申请公布日期 |
2003.04.02 |
| 申请号 |
EP20010121847 |
申请日期 |
2001.09.11 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
CAPPELLANI, ANNALISA;GOLDBACH, MATTHIAS, DR. |
| 分类号 |
H01L21/02;H01L21/306;H01L21/324;H01L21/334;H01L21/8242 |
主分类号 |
H01L21/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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