| 摘要 |
<p>The following resist composition of chemical amplification type, which is excellent in transparency to light beams and dry etching properties and gives a resist pattern excellent in sensitivity, resolution, evenness, heat resistance, etc. A resist composition which comprises a fluoropolymer (A) comprising monomer units (a) of a fluorovinyl monomer having -CF2-OR (wherein R is a C1-10 alkyl group) and monomer units (b) of an alicyclic ethylenic monomer, an acid-generating compound (B) which generates an acid upon irradiation with light, and an organic solvent (C).</p> |
