发明名称 |
Bit line control decoder circuit, virtual ground type nonvolatile semiconductor storage device provided with the decoder circuit, and data read method of virtual ground type nonvolatile semiconductor storage device |
摘要 |
<p>There is provided a virtual ground type nonvolatile semiconductor storage device capable of effectively suppressing a leak current to the adjacent cell and thereby achieving high-speed read. During read operation, a ground potential GND is applied to a bit line SBL5 connected to the source region of one memory cell transistor MC04 subjected to read. Moreover, a read drain bias potential Vread is applied to a bit line SBL4 connected to the drain region of the memory cell transistor MC04. A bit line SBL3 connected to the drain region of a first adjacent memory cell transistor MC03 is put into a floating state. A potential Vdb equal to the read drain bias potential Vread is applied to a bit line SBL2 connected to the drain region of a second adjacent memory cell transistor MC02. <IMAGE></p> |
申请公布号 |
EP1298671(A2) |
申请公布日期 |
2003.04.02 |
申请号 |
EP20020256699 |
申请日期 |
2002.09.26 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
YAMAMOTO, KAORU;ITO, NOBUHIKO |
分类号 |
G11C16/06;G11C11/40;G11C16/04;G11C16/08;G11C16/26;(IPC1-7):G11C16/04 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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