发明名称 |
APPARATUS FOR PROCESSING GASES BY PLASMA |
摘要 |
<p>A processing apparatus for subject of the present invention uses a high voltage electrode and a ground electrode, and generates plasma under atmospheric pressure in a reaction passage through which a to-be-processed subject passes. For example, even fluorocompound such as PFC including CF4 can effectively be decomposed because the fluorocompound is brought into contact with plasma in a small space for sufficient time, and the apparatus has a small and simple structure. Therefore, the apparatus can be added to each process chamber. <IMAGE></p> |
申请公布号 |
EP1297891(A1) |
申请公布日期 |
2003.04.02 |
申请号 |
EP20010934367 |
申请日期 |
2001.05.28 |
申请人 |
YOUTH ENGINEERING CO., LTD. |
发明人 |
ISHIKAWA, TOSHIAKI;ITATANI, RYOHEI HM;DEGUCHI, MIKIO;MEBARKI, BENCHERKI;TODA, TOSHIHIKO;BAN, HEITARO |
分类号 |
B01D53/32;B01D53/70;H05H1/24;(IPC1-7):B01J19/08 |
主分类号 |
B01D53/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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