发明名称 APPARATUS FOR PROCESSING GASES BY PLASMA
摘要 <p>A processing apparatus for subject of the present invention uses a high voltage electrode and a ground electrode, and generates plasma under atmospheric pressure in a reaction passage through which a to-be-processed subject passes. For example, even fluorocompound such as PFC including CF4 can effectively be decomposed because the fluorocompound is brought into contact with plasma in a small space for sufficient time, and the apparatus has a small and simple structure. Therefore, the apparatus can be added to each process chamber. <IMAGE></p>
申请公布号 EP1297891(A1) 申请公布日期 2003.04.02
申请号 EP20010934367 申请日期 2001.05.28
申请人 YOUTH ENGINEERING CO., LTD. 发明人 ISHIKAWA, TOSHIAKI;ITATANI, RYOHEI HM;DEGUCHI, MIKIO;MEBARKI, BENCHERKI;TODA, TOSHIHIKO;BAN, HEITARO
分类号 B01D53/32;B01D53/70;H05H1/24;(IPC1-7):B01J19/08 主分类号 B01D53/32
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