发明名称 |
Piggyback programming using voltage control for multi-level cell flash memory designs |
摘要 |
A method of programming a memory cell includes generating a programming pulse with stepped portions and programming the memory cell with the programming pulse. The memory cell may have 2N voltage levels, where N>1 and represents the number of bits stored within the memory cell. At least two of the 2N voltage levels can be programmed with the programming pulse.
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申请公布号 |
US6542403(B1) |
申请公布日期 |
2003.04.01 |
申请号 |
US20010779821 |
申请日期 |
2001.02.08 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
PARKER ALLAN |
分类号 |
G11C11/56;(IPC1-7):G11C16/04 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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