发明名称 Electron beam photolithographic process
摘要 An electron beam photolithographic process for patterning an insulation layer over a substrate. A conductive photoresist layer having a conjugate structure is formed over the insulation layer. An electron beam photolithographic process is conducted using a photomask so that the pattern on the photomask is transferred to the conductive photoresist layer.
申请公布号 US6541782(B2) 申请公布日期 2003.04.01
申请号 US20000734240 申请日期 2000.12.05
申请人 UNITED MICROELECTRONICS COPR. 发明人 HUANG I-HSIUNG;HWANG JIUNN-REN
分类号 G03F7/20;(IPC1-7):H01L21/00;G03F9/00 主分类号 G03F7/20
代理机构 代理人
主权项
地址