| 发明名称 |
Substrate processing apparatus and semiconductor device manufacturing method |
| 摘要 |
A substrate processing apparatus includes a heater which heats a substrate through a susceptor on which the substrate is placed. The heater is divided into a plurality of zone heaters, and a reflecting member is interposed between at least two of the plurality of zone heaters.
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| 申请公布号 |
US6541344(B2) |
申请公布日期 |
2003.04.01 |
| 申请号 |
US20010981629 |
申请日期 |
2001.10.16 |
| 申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
KASANAMI KATSUHISA;NISHITANI EISUKE;NISHIWAKI MICHIKO;OKADA SATOSHI |
| 分类号 |
H05B3/00;C23C14/50;C23C16/46;F27D11/02;H01L21/00;H01L21/205;H01L21/324;H05B3/10;(IPC1-7):H01L21/336 |
主分类号 |
H05B3/00 |
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