| 摘要 |
Before forming a resist pattern, the light reflectivity of the undercoat of the wafer is measured by a reflectivity measuring unit. The conditions are controlled according to the measured reflectivity when forming the resist pattern. The conditions when forming the resist pattern are the rotation speed when supplying the resist solution while rotating the wafer inside the resist coating unit, the exposure time in the exposing unit, the developing time in the developing unit, and so forth. Thus, by controlling the conditions when forming the resist pattern according to the light reflectivity of the wafer's undercoat, a highly fine control of the line width of the resist pattern is made possible.
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