发明名称 |
Semiconductor memory device and manufacturing method thereof |
摘要 |
A memory cell has a cylindrical electrode having a porous cylindrical portion, and insulating layers for making less steep the height of cylindrical electrode are provided in the peripheral circuit region. Thus a semiconductor memory device and manufacturing method thereof can be provided in which the step between the memory cell array region and the peripheral circuit region can be made less steep by a smaller number of manufacturing steps.
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申请公布号 |
US6541337(B2) |
申请公布日期 |
2003.04.01 |
申请号 |
US20010816399 |
申请日期 |
2001.03.26 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MATSUFUSA JIRO |
分类号 |
H01L21/8242;H01L21/02;H01L27/108;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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