发明名称 Film forming method and film forming apparatus
摘要 The present invention is a film forming method of forming a film of a treatment solution on the front face of a substrate in a treatment chamber including the steps of: supplying the treatment solution to the substrate mounted on a holding member in the treatment chamber in states of gas being supplied into the treatment chamber and of an atmosphere in the treatment chamber being exhausted; and measuring the temperature of the front face of the substrate before the supply of the treatment solution. The measurement of the temperature of the front face of the substrate before the supply of the treatment solution enables the check of the temperature of the front face of the substrate and the temperature distribution. Then, the measured result is compared with a previously obtained ideal temperature distribution for the formation of a film with a uniform thickness, thereby predicting the film thickness of the film which will be formed in the following processing. Further, the treatment film is formed after the temperature measurement and the film thickness of the treatment film is evaluated, thereby storing the data to find and set so-called optimal conditions. Consequently, the temperature or the like of the treatment solution or the like can be adjusted based on the measured results and corrected to make the film thickness uniform.
申请公布号 US6541376(B2) 申请公布日期 2003.04.01
申请号 US20010827910 申请日期 2001.04.09
申请人 TOKYO ELECTRON LIMITED 发明人 INADA HIROICHI;NAGAMINE SHUICHI
分类号 B05C9/08;B05C11/08;B05C11/10;B05D1/40;B05D3/00;G03F7/16;H01L21/00;H01L21/027;(IPC1-7):H01L21/44 主分类号 B05C9/08
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