发明名称 |
Method of fabricating metal oxide semiconductor transistor with lightly doped impurity regions formed after removing spacers used for defining higher density impurity regions |
摘要 |
In a method of fabricating a metal oxide semiconductor (MOS) transistor with a lightly doped drain (LDD) structure without spacers, gate electrodes and spacers are formed on a semiconductor substrate. A high density source/drain region is formed using the gate electrodes and the spacers as masks. A low density source/drain region is formed after removing the spacers. It is possible to reduce the thermal stress of the low density source/drain region by forming the high density source/drain region before the low density source/drain region is formed and to increase an area, in which suicide is formed, by forming a structure without spacers. Also, it is possible to simplify processes of fabricating a complementary metal oxide semiconductor (CMOS) LDD transistor by reducing the number of photoresist pattern forming processes in the method.
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申请公布号 |
US6541328(B2) |
申请公布日期 |
2003.04.01 |
申请号 |
US20010000894 |
申请日期 |
2001.11.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
WHANG SUNG-MAN;PARK HYUNG-MOO;MAENG DONG-CHO;LEE HYAE-RYOUNG;PARK HO-WOO |
分类号 |
H01L21/8238;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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