| 发明名称 |
Method for forming an asymmetric nitride laser diode |
| 摘要 |
A structure and method for an asymmetric waveguide nitride laser diode without need of a p-type waveguide is disclosed. The need for a high aluminum tunnel barrier layer in the laser is avoided. |
| 申请公布号 |
US6541292(B2) |
申请公布日期 |
2003.04.01 |
| 申请号 |
US20010998335 |
申请日期 |
2001.12.03 |
| 申请人 |
XEROX CORPORATION |
发明人 |
VAN DE WALLE CHRISTIAN G.;BOUR DAVID P.;KNEISSL MICHAEL A.;ROMANO LINDA T. |
| 分类号 |
H01S5/20;H01S5/30;H01S5/343;(IPC1-7):H01L21/00 |
主分类号 |
H01S5/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
