| 摘要 |
A semiconductor device includes a substrate, and the substrate is formed with a wiring pattern on its surface. The wiring pattern includes electrodes, wire-bonding (WB) pads and connecting portions for connecting the electrodes and the WB pads. The WB pads are so formed that the lengthwise directions thereof are in parallel or approximately in parallel to lines, in radiative form, extending from the center of a die-bonding (DB) area. Accordingly, if a chip having a first size is die-bonded within the DB area, bonding wires become approximately in parallel to the lengthwise directions of the WB pads. Even if a chip having a second size smaller than the first size but the same shape is die-bonded, the bonding wires are also in parallel to the lengthwise directions of the WB pads. Thus, since one substrate can be used regardless of the size of a chip, there is no need to prepare a plurality of wiring patterns for each size of chips.
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