发明名称 |
Semiconductor device including a plurality of interconnection layers, manufacturing method thereof and method of designing semiconductor circuit used in the manufacturing method |
摘要 |
A semiconductor device including an interconnection structure having superior electrical characteristics and allowing higher speed of operation and lower power consumption even when miniaturized, manufacturing method thereof and a method of designing a semiconductor circuit used in the manufacturing method are provided. In the semiconductor device, a conductive region is formed on a main surface of a semiconductor substrate. A first interconnection layer is electrically connected to the conductive region, has a relatively short line length, and contains a material having relatively high electrical resistance. A first insulator is formed to surround the first interconnection layer and has a relatively low dielectric constant. A second interconnection layer is formed on the main surface of the semiconductor substrate, contains a material having low electrical resistance than the material contained in the first interconnection layer, and has longer line length than the first interconnection layer. A second insulator is formed to surround the second interconnection layer and has a dielectric constant higher than the first insulator.
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申请公布号 |
US6541862(B2) |
申请公布日期 |
2003.04.01 |
申请号 |
US20010907675 |
申请日期 |
2001.07.19 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
AMISHIRO HIROYUKI;IGARASHI MOTOSHIGE |
分类号 |
H01L21/768;H01L21/8238;H01L23/522;H01L23/528;H01L27/092;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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