发明名称 Read only memory structure
摘要 An apparatus including at least one designated memory cell of a plurality of memory cells. Disposed within each designated memory cell is a resistance-altering constituent. Consequently, a first binary value is recognoized in each designated cell and at least a second binary value is recognized in each remaining cell.
申请公布号 US6542397(B2) 申请公布日期 2003.04.01
申请号 US20010888878 申请日期 2001.06.25
申请人 LUCENT TECHNOLOGIES INC. 发明人 MILLS, JR. ALLEN PAINE
分类号 G11C17/00;G11C17/10;(IPC1-7):G11C17/00;G11C11/00 主分类号 G11C17/00
代理机构 代理人
主权项
地址