发明名称 High-voltage tolerance input buffer and ESD protection circuit
摘要 A high-voltage tolerance input buffer and a high-voltage ESD protection circuit connected to a pad of an integrated circuit for preventing rapid gate oxide aging. The high-voltage tolerance input buffer of the present invention comprises a voltage-sharing circuit and a switch circuit, wherein the voltage-sharing circuit is connected between the pad and a power rail and generates a reference voltage not higher than the voltage of the pad. The switch circuit is connected to the voltage-sharing circuit and comprises a control gate to control the switching operation of the switch circuit according to the reference voltage. The present invention can be implemented to solve the rapid gate oxide aging problem without incurring any change in the original process flow by employing a voltage-sharing circuit.
申请公布号 US6542346(B1) 申请公布日期 2003.04.01
申请号 US20000586568 申请日期 2000.06.02
申请人 WINBOND ELECTRONICS CORP. 发明人 CHEN WEI-FAN;LEE SHU-CHUAN;YU TA-LEE;LIN SHI-TRON
分类号 H01L23/60;H01L27/02;H02H3/22;H02H9/04;(IPC1-7):H02H3/22 主分类号 H01L23/60
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