Method of manufacturing an SOI type semiconductor that can restrain floating body effect

摘要

A method of forming a SOI type semiconductor device comprises forming a first trench in a SOI layer forming a portion of an isolation layer region between an element region and a ground region by etching the SOI layer of a SOI type substrate using an etch stop layer pattern as an etch mask, forming an impurity layer in or on a bottom surface of the first trench, forming a second trench exposing a buried oxide layer in the SOI layer in the remainder of the isolation layer region except the portion thereof between the element region and the ground region, and forming an isolation layer by depositing an insulation layer over the SOI substrate having the first and second trenches. The impurity layer can be formed by depositing a SiGe single crystal layer in the bottom surface of the first trench. Also, the impurity layer can be formed by implanting ions in the bottom surface of the first trench.