| 摘要 |
A semiconductor laser device includes an electron carrying layer formed on a semiconductor substrate. An active layer which includes a first straight active layer region having a first width and a second straight active layer region having a second width is formed on the electron carrying layer. Here, the first straight active layer region is joined to the second active layer, the second width is narrower than the first width, and the active layer radiates laser light in response to an application of a voltage higher than or equal to a predetermined voltage. A hole carrying layer is formed on the active layer in contact with the active layer.
|
