发明名称 Low distortion broadband amplifier using GaAs pHEMT devices
摘要 A broadband power amplifier circuit providing wide bandwidth with low distortion. The broadband power amplifier circuit includes a GaAs pHEMT MMIC with two (2) serially coupled cascode amplifiers in a first half of the circuit, two (2) serially coupled cascode amplifiers in a second half of the circuit, a first balun for receiving a single-ended RF or microwave input signal at a circuit input and providing first and second balanced low level signals to the cascode amplifiers of the first and second circuit halves, respectively, and a second balun for receiving first and second balanced high level signals generated by the cascode amplifiers of the first and second circuit halves, respectively, and providing a single-ended amplified broadband output signal with low distortion at a circuit output.
申请公布号 US6542037(B2) 申请公布日期 2003.04.01
申请号 US20010925762 申请日期 2001.08.09
申请人 TYCO ELECTRONICS CORP. 发明人 NOLL ALAN LINDE;LYFORD RYAN BENJAMIN
分类号 H03F1/22;H03F3/26;(IPC1-7):H03F3/04 主分类号 H03F1/22
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