| 摘要 |
A method for forming a pattern in a resist is provided. A resist is formed on a surface of a substrate. A first portion of the resist is exposed to a charged particle beam, such as an electron beam, to alter a first characteristic of the first portion of the resist. A second portion of the resist is exposed to electromagnetic radiation, such as UV light, to alter a second characteristic of the second portion of the resist. The second portion is larger than the first portion. At least part of the first portion is removed using the altered characteristics of the resist such that a remaining portion defines the pattern in the resist. Using this method, fine pattern resists having less than 100 nm resolution may be created at high throughput rates.
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