发明名称 Integrated ion implant scrubber system
摘要 An ion implantation process system, including an ion implanter apparatus for carrying out an ion implantation process. A supply of source gas for the ion implantation process is arranged to flow to the ion implanter apparatus, which discharges an effluent gas stream including ionization products of the source gas during the ion implantation process. The system includes an effluent abatement apparatus for removing hazardous effluent species from the effluent gas stream. The source gas may be furnished from a low pressure gas source in which the source gas is sorptively retained in a vessel on a sorbent medium having affinity for the source gas, and desorbed for dispensing to the process system. A novel scrubbing composition may be employed for effluent treatment, and the scrubbing composition breakthrough of scrubbable component may be monitored with a device such as a quartz microbalance monitor.
申请公布号 US6540814(B2) 申请公布日期 2003.04.01
申请号 US20010997393 申请日期 2001.11.29
申请人 ADVANCED TECHNOLOGY MATERIALS, INC 发明人 HAYES MICHAEL W.;HOLST MARK R.;ARNO JOSE I.;TOM GLENN M.
分类号 B01D53/40;B01D53/68;B01D53/82;C23C14/48;C23C14/56;E04B1/24;E04C3/04;G01N27/00;G01N29/02;G01N29/036;H01J37/317;H01L21/265;(IPC1-7):B01D53/04 主分类号 B01D53/40
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