发明名称 |
Semiconductor device including impurity layer having continuous portions formed at different depths and method of manufacturing the same |
摘要 |
A trench is formed in a substrate and a silicon oxide film which serves as a trench isolation is buried in the trench. The silicon oxide film has no shape sagging from a main surface of the substrate. A channel impurity layer to control a threshold voltage of a MOSFET is formed in the main surface of the substrate. The channel impurity layer is made of P-type layer, having an impurity concentration higher than that of the substrate. A first portion of the channel impurity layer is formed near an opening edge of the trench along a side surface of the trench in the source/drain layer, and more specifically, in the N+-type layer. A second portion of the channel impurity layer is formed deeper than the first portion. A gate insulating film and a gate electrode are formed on the main surface of the substrate.
|
申请公布号 |
US6541825(B2) |
申请公布日期 |
2003.04.01 |
申请号 |
US20010805923 |
申请日期 |
2001.03.15 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KUROI TAKASHI;UENO SYUICHI;HORITA KATSUYUKI |
分类号 |
H01L21/76;H01L21/762;H01L21/8234;H01L21/8238;H01L21/8242;H01L27/092;H01L27/108;H01L29/10;H01L29/78;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/76 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|