| 摘要 |
A high electron mobility transistor photodetector includes an undoped GaAs buffer, a p-type GaAs layer positioned above the undoped GaAs buffer that is between 0.5 to 1 mum in thickness, an undoped low temperature GaAs layer positioned above the p-type GaAs layer, an undoped GaAs layer positioned above the low temperature GaAs layer, a layer of undoped InGaAs positioned above the undoped GaAs layer, a layer of undoped AlGaAs positioned above the layer of InGaAs, an n+ AlGaAs charge-suppling layer positioned above the layer of undoped AlGaAs, an n+ GaAs contact layer positioned above the n+ AlGaAs charge-supplying layer, and source and drain ohmic contacts positioned above the n+ GaAs contact layer. A negative bias voltage is applied to the p-type GaAs layer to sweep the holes from the photo-absorptive layer which greatly increases the speed and responsiveness of the device.
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