| 摘要 |
PURPOSE: A metal gate complementary metal oxide semiconductor(CMOS) is provided to prevent an edge transistor effect and minimize a leakage current of a transistor by depositing a dummy gate portion before a shallow trench isolation(STI) is formed so that a facet is not formed in an active region adjacent to a shallow trench. CONSTITUTION: A metal gate electrode material is deposited as a final step before the CMOS device is metalized so that the metal gate material is not subject to contamination during a fabrication process. The device is fabricated without the use of oxide spacers so that the finished device does not suffer from silicon faceting at an interface between an active region and the STI(24,26). The dummy gate material is used to define a planarization stop layer that allows precise planarization of the device during the fabrication process.
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